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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
August 2007
SuperFET
FCH47N60 / FCA47N60 / FCA47N60_F109
600V N-Channel MOSFET Features
* 650V @TJ = 150C * Typ. Rds(on)=0.058 * Ultra low gate charge (typ. Qg=210nC) * Low effective output capacitance (typ. Coss.eff=420pF) * 100% avalanche tested
TM
Description
SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D
G GD S
TO-247
FDH Series
TO-3P
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FCH47N60
600
FCA47N60
Unit
V A A A V mJ A mJ V/ns W W/C C C
47 29.7 141 30 1800 47 41.7 4.5 417 3.33 -55 to +150 300
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Typ.
-0.24 --
Max.
0.3 -41.7
Unit
C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FCH47N60 / FCA47N60 / FCA47N60_F109 Rev.B2
FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCH47N60 FCA47N60 FCA47N60
Device
FCH47N60 FCA47N60 FCA47N60_F109
Package
TO-247 TO-3P TO-3PN
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
30 30 30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C ID = 250A, Referenced to 25C VGS = 0V, ID = 47A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 23.5A VDS = 40V, ID = 23.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
600 -------3.0 ----------(Note 4, 5)
Typ
-650 0.6 700 -----0.058 40 5900 3200 250 160 420 185 210 520 75 210 38 110
Max Units
----1 10 100 -100 5.0 0.07 -8000 4200 ---430 450 1100 160 270 --V V V/C V A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 47A RG = 25
Switching Characteristics
-----
VDS = 480V, ID = 47A VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 47A VGS = 0V, IS = 47A dIF/dt =100A/s
(Note 4)
------
---590 25
47 141 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 47A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
2
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
Figure 2. Transfer Characteristics
10
2
ID, Drain Current [A]
ID , Drain Current [A]
10
2
150
1
10
1
10
25 -55
Note 1. VDS = 40V 2. 250 s Pulse Test
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
10
0
10
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
RDS(ON) [ ],Drain-Source On-Resistance
0.20
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
IDR , Reverse Drain Current [A]
0.15
10
2
VGS = 10V
0.10
10
1
VGS = 20V
0.05
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
10
200
0
0.00
0
20
40
60
80
100
120
140
160
180
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
30000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 100V
VGS, Gate-Source Voltage [V]
25000
10
VDS = 250V
VDS = 400V
Capacitance [pF]
20000
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
8
15000
6
Ciss
10000
4
5000
Crss
2
Note : ID = 47A
0 -1 10
10
0
10
1
0
0
50
100
150
200
250
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
3
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
3.0
Figure 8. On-Resistance Variation vs. Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
1.1
2.0
1.0
1.5
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
1.0
Notes : 1. VGS = 10 V 2. ID = 47 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
50
10
2
Operation in This Area is Limited by R DS(on)
100 us 10 ms DC
40
ID, Drain Current [A]
10
1
ID, Drain Current [A]
10
3
1 ms
30
10
0
20
Notes :
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
10
10
-2
10
0
10
1
10
2
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ ]
Figure 10. Transient Thermal Response Curve
Z JC Thermal Response (t),
D = 0 .5
10
-1
0 .2 0 .1 0 .0 5 0 .0 2
10
-2
N o te s : 1 . Z J C t) = 0 .3 ( /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C t) (
PDM t1
s in g le p u ls e
10
-4
0 .0 1
t2
10
-5
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
4
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
5
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
6
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
7
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
8
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3PN
Dimensions in Millimeters
FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
9
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FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
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Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
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PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
10 FCH47N60 / FCA47N60 / FCA47N60_F109 Rev. B2
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